• DocumentCode
    2406981
  • Title

    Nova Cut™ process: fabrication of silicon on insulator materials

  • Author

    Lin, Jason T S ; Peng, James ; Lee, T.-H.

  • Author_Institution
    John Wolf Int. Inc., Taipei, Taiwan
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    189
  • Lastpage
    191
  • Abstract
    A layer transferring technique, so-called "Smart Cut" or "Ion Cut" process, employing wafer bonding and a thermally implanted ion-assist layer splitting method has been successfully developed to manufacture bonding-based SOI materials. This paper demonstrates a non-thermal approach to achieve the same layer splitting and transferring effect: the use of a microwave hybrid instead of the use of heating in the implanted ion-assist layer transfer method for the fabrication of SOI materials. One of the interesting effects in the process with microwave energy is that certain physical and chemical properties of materials can be altered under microwave irradiation to create several desired effects not observed in conventional processes.
  • Keywords
    elemental semiconductors; microwave heating; silicon; silicon-on-insulator; wafer bonding; Nova Cut process; SOI materials; Si-SiO2; layer transferring technique; microwave energy; microwave hybrid; microwave irradiation; nonthermal approach; silicon on insulator materials; wafer bonding; Electromagnetic heating; Silicon; Silicon on insulator technology; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044471
  • Filename
    1044471