DocumentCode
2409364
Title
Conductive Atomic Force Microscopy failure analysis for SOI devices
Author
Soon-Hua, Lim ; Xinhua, Zheng ; Chea-Wei, Teo ; Narang, Vinod ; Hock, Teo Beng ; Chin, JM
Author_Institution
Adv. Micro Devices Pte Ltd., Singapore
fYear
2008
fDate
7-11 July 2008
Firstpage
1
Lastpage
4
Abstract
A FIB shorting technique to create a conducting path across the buried oxide to connect active silicon to silicon substrate is demonstrated to allow conductive atomic force microscopy (CAFM) failure analysis on SOI devices. CAFM is carried out at via and contact levels to provide current images that helped to localize the faulty node and also determine current-voltage characteristics at an area of interest.
Keywords
atomic force microscopy; failure analysis; focused ion beam technology; integrated circuit testing; silicon-on-insulator; FIB shorting technique; SOI devices; buried oxide; conductive atomic force microscopy; failure analysis; focused ion beam shorting method; Atomic force microscopy; Contacts; Electron beams; Failure analysis; Ion beams; Optical microscopy; Scanning electron microscopy; Silicon on insulator technology; Substrates; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location
Singapore
Print_ISBN
978-1-4244-2039-1
Electronic_ISBN
978-1-4244-2040-7
Type
conf
DOI
10.1109/IPFA.2008.4588162
Filename
4588162
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