Study of materials and low power techniques for CNTFET

Moore´s Law states that the number of transistors on a chip will double about every two years. As transistors are scaled down to nanometers, the theory and structure of nanometers devices such as carbon nanotubes field effect transistors (CNTFET) are being extensively studied. CNTFETs, offers high mobility due to ballistic transport, high carrier velocity for faster switching, reduced chip area and reduced number of interconnects. With the fundamental scaling limits are set by the minimum wavelength of light used in lithographic techniques, the only option is to enhance the performance of the CNTFET circuits This paper deals with the study of materials and their impact on the parameters and performance of CNTFET.