Two high dynamic range mmW amplifiers in SMT package with ESD protection

Author

Phan, Khanhtran ; Fujii, Kohei ; Morkner, Henrik

Author_Institution

Avago Technol., San Jose

fYear

2007

fDate

9-12 Oct. 2007

Firstpage

1209

Lastpage

1212

Abstract

This paper presents two high dynamic range amplifiers in the 7-21GHz and 18-32 GHz that are easy to use, high performance and low cost. For ease of use they are housed in 5x5 mm surface mount package and integrate 50 Omega input/output matching. In measured results, the 7-21 GHz amplifier delivers over 20 dB gain, 2.3 dB NF, 28 dBm OIP3 and the 18-32 GHz amplifier provides over 20 dB gain, 2.8 dB NF and 28 dBm OIP3. Cost is kept low through utilization of PHEMT 6" wafers and volume automated package panel assembly and test. These products are unique and industry leading in all aspects of design, packaging, performance and cost.

Keywords

amplifiers; electrostatic discharge; high electron mobility transistors; surface mount technology; ESD protection; PHEMT wafers; frequency 18 GHz to 32 GHz; frequency 7 GHz to 21 GHz; gain 2.3 dB; gain 2.8 dB; gain 20 dB; gain 28 dB; high dynamic range amplifiers; resistance 50 ohm; size 6 in; surface mount technology package; volume automated package panel assembly; Costs; Dynamic range; Electrostatic discharge; Gain measurement; Impedance matching; Noise measurement; PHEMTs; Packaging; Protection; Surface-mount technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-001-9

Type

conf

DOI

10.1109/EUMC.2007.4405417

Filename

4405417