Etching of copper in deionized water rinse

Author

Gambino, J. ; Robbins, J. ; Rutkowski, T. ; Johnson, C. ; DeVries, K. ; Rath, D. ; Vereecken, P. ; Walton, E. ; Porth, B. ; Wenner, M. ; McDevitt, T. ; Chapple-Sokol, J. ; Luce, S.

Author_Institution

IBM Microelectron., Essex Junction, VT

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

4

Abstract

A new yield loss mechanism is described that is related to the etching of Cu in deionized water. Water that contains high concentrations of dissolved oxygen can etch Cu at the bottom of vias during pre-metallization wet cleans. The etching creates voids in the Cu which remain after metallization, resulting in high resistance and functional fails in the affected array circuits. The dissolved oxygen concentration in the deionized water must be minimized to prevent etching of Cu.

Keywords

CMOS integrated circuits; copper; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; voids (solid); CMOS process; Cu; array circuit; copper etching; copper interconnect; deionized water rinse; dissolved oxygen concentration; pre-metallization wet clean; voids; yield loss mechanism; Anodes; Cathodes; Chemicals; Copper; Corrosion; Electrons; Integrated circuit interconnections; Microelectronics; Water; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Electronic_ISBN

978-1-4244-2040-7

Type

conf

DOI

10.1109/IPFA.2008.4588209

Filename

4588209