DocumentCode
2410859
Title
The Twin Cell for a New Dynamic Storage Approach in Three 18K FET RAM Chips
Author
Haug, W. ; Schnadt, R.
Author_Institution
IBM Labs., Boeblingen, Germany
fYear
1980
fDate
22-25 Sept. 1980
Firstpage
161
Lastpage
163
Abstract
The twin cell - a double-ended dynamic two-device FET memory cell - is the basic element for a really symmetrical sense system. This new approach has successfully been used in three different byte wide 18K RAM chips.
Keywords
field effect transistor circuits; integrated memory circuits; random-access storage; FET RAM chips; double-ended dynamic two-device FET memory cell; dynamic storage; twin cell; Buffer storage; Circuits; Control systems; Decoding; FETs; Laboratories; Random access memory; Read-write memory; Switches; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location
Grenoble
Type
conf
DOI
10.1109/ESSCIRC.1980.5468764
Filename
5468764
Link To Document