DocumentCode
2410861
Title
Single event effects testing of a PLL and LVDS in a RadHard-by-design 0.25-micron ASIC
Author
Hartwell, Mary ; Hafer, Craig ; Milliken, Peter ; Farris, Teresa
Author_Institution
Aeroflex Colorado Springs Inc., Colorado Springs, CO, USA
fYear
2005
fDate
11-15 July 2005
Firstpage
98
Lastpage
101
Abstract
SEE testing performed on PLL and LVDS circuits showed both are immune to SEL to a LET of 108 MeV-cm2/mg. Temporary phase shifts and frequency changes caused by SET in the PLL are investigated.
Keywords
CMOS integrated circuits; application specific integrated circuits; driver circuits; integrated circuit testing; low-power electronics; phase locked loops; radiation effects; 0.25 micron; ASIC RadHard-by-design; LVDS circuits; PLL circuits; frequency change; low voltage differential signal drivers; phase locked loops; phase shifts; single event effects testing; single event latch up; Application specific integrated circuits; Circuit testing; Integrated circuit technology; Libraries; Performance evaluation; Phase locked loops; Radiation hardening; Space technology; Springs; Technology management;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2005. IEEE
Print_ISBN
0-7803-9367-8
Type
conf
DOI
10.1109/REDW.2005.1532673
Filename
1532673
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