Total ionizing dose effects on the analog performance of a 0.13 μm CMOS technology

Author

Re, Valerio ; Manghisoni, Massimo ; Ratti, Lodovico ; Speziali, Valeria ; Traversi, Gianluca

Author_Institution

Dipt. di Ingegneria Industriale, Universita di Bergamo, Pavia, Italy

fYear

2005

fDate

11-15 July 2005

Firstpage

122

Lastpage

126

Abstract

This paper presents a study of the ionizing radiation tolerance of static, signal and noise characteristics of 0.13 μm CMOS transistors, in the context of designing rad-hard analog integrated circuits. Device parameters were monitored before and after irradiation with ⁶⁰Co γ-rays at a 10 Mrad (SiO₂) total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.

Keywords

1/f noise; CMOS analogue integrated circuits; MOSFET; cobalt; gamma-ray effects; semiconductor device noise; semiconductor device testing; silicon compounds; 0.13 micron; 1/f noise; ⁶⁰Co γ-rays; CMOS technology; CMOS transistors; Co; MOSFET device; SiO₂; integrated circuit designing; ionizing radiation tolerance; rad-hard analog integrated circuits; threshold voltage shift; total ionizing dose effects; Analog integrated circuits; CMOS analog integrated circuits; CMOS technology; Condition monitoring; Integrated circuit noise; Integrated circuit technology; Ionizing radiation; Radiation hardening; Signal design; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2005. IEEE

Print_ISBN

0-7803-9367-8

Type

conf

DOI

10.1109/REDW.2005.1532677

Filename

1532677