1.3 /spl mu/m InGaAsP/InP strained-layer MQW lasers fabricated by reactive ion etching and MOVPE regrowth with CH/sub 3/Cl addition

Author

Yamamoto, T. ; Kobayashi, H. ; Watanabe, T. ; Shoji, H. ; Akiyama, S. ; Uchida, T. ; Fujii, T. ; Kobayashi, M. ; Soda, H.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

21

Lastpage

22

Abstract

Using reactive ion etching and MOVPE regrowth with CH/sub 3/Cl addition, 1.3 /spl mu/m InGaAsP-InP BH lasers with excellent high temperature characteristics and uniformity were fabricated. A narrow-beam-divergence laser with tapered stripe width is also demonstrated.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical fabrication; quantum well lasers; sputter etching; vapour phase epitaxial growth; 1.3 mum; CH/sub 3/Cl addition; InGaAsP-InP; InGaAsP-InP BH lasers; InGaAsP/InP strained-layer MQW lasers; MOVPE regrowth; excellent high temperature characteristics; narrow-beam-divergence laser; reactive ion etching; tapered stripe width; Electrons; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Laser beams; Power generation; Quantum well devices; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734119

Filename

734119