Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS

Author

Arora, Rajan ; Moen, Kurt A. ; Madan, Anuj ; Cressler, John D. ; Zhang, EnXia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Sutton, Akil K. ; Nayfeh, Hasan M.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2010

fDate

17-21 Oct. 2010

Firstpage

56

Lastpage

60

Abstract

We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T- body). The effects of total dose irradiation on reliability are investigated. Body contacted devices are shown to be more tolerant to radiation than floating-body devices. Asymmetric halo doping devices show less hot carrier degradation than symmetric halo doping devices. In addition, we investigate the dependence of hot carrier reliability on the metal contact spacing of the Source/Drain (S/D) terminals, the PC-PC spacing, and the RF device performance trade-offs that result.

Keywords

CMOS integrated circuits; hot carriers; integrated circuit reliability; radiation hardening (electronics); radiofrequency integrated circuits; RF CMOS; asymmetric halo doping device; body tie; floating body device; hot carrier degradation; hot carrier reliability; notched T- body; size 45 nm; source-drain contact spacing; total dose irradiation; CMOS integrated circuits; Electric fields; Hot carriers; Performance evaluation; Radio frequency; Semiconductor device reliability; HCR; RF; RFCMOS; S/D; T-body; fT; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International

Conference_Location

Stanford Sierra, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-8521-5

Type

conf

DOI

10.1109/IIRW.2010.5706486

Filename

5706486