Characterization of anomalous erase effects in 48 nm TANOS memory cells

Author

Loehr, D.-A. ; Hoffmann, R. ; Naumann, A. ; Paul, J. ; Seidel, K. ; Czernohorsky, M. ; Beyer, V.

Author_Institution

Fraunhofer Center Nanoelectronic Technol., Dresden, Germany

fYear

2010

fDate

17-21 Oct. 2010

Firstpage

89

Lastpage

91

Abstract

On TANOS (Tantalum Alumina Nitride Oxide Silicon) charge trap cells an anomalous effect is observed during cell erase operation. Different TANOS cell architectures are investigated including an encapsulation liner of different thickness. Especially on cells fabricated without such a liner an unintended programming is observed and characterized in detail. A new characterization method is proposed to analyze this anomalous erase effect observed as an “erase hump” in transient erase characteristics. This effect is studied and discussed in correlation with liner thickness and cell retention behavior supported by electrical field simulations for cell erase conditions.

Keywords

aluminium compounds; electron traps; flash memories; silicon; silicon compounds; tantalum compounds; Si-SiO₂-SiN-Al₂O₃-TaN; TANOS memory cells; anomalous cell erase effects; cell retention behavior; charge trap cells; encapsulation liner; erase hump; size 48 nm; Aluminum oxide; Encapsulation; Logic gates; Programming; Threshold voltage; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International

Conference_Location

Stanford Sierra, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-8521-5

Type

conf

DOI

10.1109/IIRW.2010.5706494

Filename

5706494