DocumentCode
2412475
Title
Cryogenic high-speed operation of double-fused 1.5 /spl mu/m vertical-cavity lasers
Author
Yongming Zhang ; Joachim Piprek ; Margalit, N. ; Anzlowar, M. ; Bowers, J.
Author_Institution
Conductus Inc., Sunnyvale, CA, USA
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
117
Lastpage
118
Abstract
We report on continuous-wave operation of long-wavelength vertical-cavity InGaAsP-InP MQW lasers over a wide temperature range from 7 K to 300 K. Modulation current efficiencies of 1.4 GHz/mA/sup 1/2/ (291 K) and of 3.1 GHz/mA/sup 1/2/ (180 K) are measured.
Keywords
III-V semiconductors; cryogenics; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser transitions; quantum well lasers; 1.5 mum; 180 K; 291 K; 7 to 300 K; InGaAsP-InP; cryogenic high-speed operation; double-fused IR vertical-cavity lasers; long-wavelength vertical-cavity InGaAsP-InP MQW lasers; modulation current efficiencies; wide temperature range; Cryogenics; Current measurement; Distributed Bragg reflectors; Pulse measurements; Resonance; Resonant frequency; Temperature sensors; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734164
Filename
734164
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