Mechanism of polarisation pinning in vertical cavity surface emitting lasers using focused ion beam etching

Author

Sargent, L.J. ; Kuball, H. ; Rorison, J.M. ; Penty, R.V. ; White, I.H. ; Heard, P.J. ; Tan, M.R.T. ; Wang, S.Y.

Author_Institution

Dept. of Electr. & Electron. Eng., Bristol Univ., UK

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

119

Lastpage

120

Abstract

Photoluminescence experiments have identified strain as the origin for polarisation pinning in GaAs top-emitting vertical cavity surface emitting QW lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimise polarisation pinning.

Keywords

III-V semiconductors; focused ion beam technology; gallium arsenide; light polarisation; optical fabrication; photoluminescence; quantum well lasers; semiconductor device models; sputter etching; surface emitting lasers; GaAs; GaAs top-emitting vertical cavity surface emitting QW lasers; focused ion beam etching; photoluminescence experiments; polarisation pinning; post-annealing; post-processed; strain; vertical cavity surface emitting lasers; Capacitive sensors; Etching; Gallium arsenide; Ion beams; Laser modes; Laser theory; Photoluminescence; Polarization; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734165

Filename

734165