• DocumentCode
    2412508
  • Title

    Modelling of MESFET high order nonlinear distortion

  • Author

    Sivyakov, B.K. ; Gurjyanov, A.A.

  • Author_Institution
    Saratov State Tech. Univ., Russia
  • fYear
    2002
  • fDate
    18-19 Sept. 2002
  • Firstpage
    67
  • Lastpage
    70
  • Abstract
    The 7-th order MESFET model to calculate intermodulation distortions up to 5-th order inclusively is offered. The identification of model parameters is realized on the basis of measurements the transfer characteristics. Comparison of calculation the MESFET transfer characteristic by 5-th and 7-th order models is carried out.
  • Keywords
    Schottky gate field effect transistors; intermodulation distortion; semiconductor device models; MESFET; high-order nonlinear distortion model; intermodulation distortion; transfer characteristics; Distortion measurement; Gallium arsenide; Helium; Intermodulation distortion; MESFETs; Nonlinear distortion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
  • Conference_Location
    Saratova, Russia
  • Print_ISBN
    5-7433-1065-3
  • Type

    conf

  • DOI
    10.1109/APEDE.2002.1044898
  • Filename
    1044898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2412508