Monolithically integrated InGaAs-AlGaAs master oscillator power amplifier with grating outcoupler

Author

Uemukai, M. ; Matsumoto, N. ; Suhara, T. ; Nishihara, H. ; Eriksson, N. ; Larsson, A.

Author_Institution

Dept. of Electron., Osaka Univ., Japan

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

125

Lastpage

126

Abstract

A monolithically integrated InGaAs-AlGaAs strained QW master oscillator power laser amplifier with a grating outcoupler, fabricated without regrowth and emitting a collimated beam, is demonstrated. Stable single mode lasing up to 124 mW output was obtained under CW operation.

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; integrated optoelectronics; laser beams; laser modes; laser stability; optical collimators; optical couplers; quantum well lasers; semiconductor optical amplifiers; 124 mW; CW operation; InGaAs-AlGaAs; InGaAs-AlGaAs master oscillator power amplifier; InGaAs-AlGaAs strained QW master oscillator power laser amplifier; collimated beam; grating outcoupler; mW output; monolithically integrated; stable single mode lasing; Distributed Bragg reflectors; Electrons; Gratings; Laser beams; Optical collimators; Optical device fabrication; Oscillators; Power amplifiers; Surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734168

Filename

734168