A novel current sourced ultrasonic carrier PWM converter with the IGBT in the near future

Author

Nishimura, Toshi Hiro ; Kiwaki, Hisakatsu ; Maranesi, Piero G.

Author_Institution

Dept. of Electr. Eng., Oita Univ., Japan

fYear

1989

fDate

6-10 Nov 1989

Firstpage

124

Abstract

A novel current sourced ultrasonic carrier PWM (pulse-width modulated) converter using an insulated gate bipolar transistor (IGBT) with self-aligned DMOS structure is described. The sinusoidal waveform compared with the ultrasonic corrected triangular waveform method is used as the PWM pulse pattern to operate the converter. Because of the ultrasonic PWM carrier frequency, the converter transforms the AC line current waveform into the sinusoidal waveform, the filter connected to the AC side of the converter can be reduced in size, and the displacement factor is improved. When the PWM carrier frequency f _c is=20.64 kHz, the displacement factor is improved compared with f_c=4.08 kHz

Keywords

bipolar transistors; electric current control; insulated gate field effect transistors; power convertors; pulse width modulation; ultrasonic applications; 20.64 kHz; AC line current waveform; IGBT; current sourced ultrasonic carrier PWM converter; insulated gate bipolar transistor; self-aligned DMOS structure; sinusoidal waveform; Band pass filters; Circuits; Frequency conversion; Insulated gate bipolar transistors; Low pass filters; Power harmonic filters; Power semiconductor switches; Pulse width modulation; Pulse width modulation converters; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, 1989. IECON '89., 15th Annual Conference of IEEE

Conference_Location

Philadelphia, PA

Type

conf

DOI

10.1109/IECON.1989.69622

Filename

69622