DocumentCode
2413273
Title
Experimental definition of constants a deformation potential n- and p-silicon
Author
Scvortcov, A.A. ; Litvinenko, O.V.
Author_Institution
Ulyanovsk State Univ., Simbirsk, Russia
fYear
2002
fDate
18-19 Sept. 2002
Firstpage
255
Lastpage
257
Abstract
At deformation of semiconducting chips the deformation change of energy charge carriers is determined by value constants of a deformation potential. These constants play an essential role in the description of kinetic effects, but the finding of their numerical values introduces considerable difficulties and frequently has evaluation nature. Therefore given activity is dedicated to experimental definition of some constants of a deformation potential in single-crystal silicon.
Keywords
electron-phonon interactions; elemental semiconductors; silicon; Si; charge carrier energy; deformation potential; kinetic effects; semiconducting chip; single-crystal silicon; Charge carriers; Kinetic theory; Semiconductivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
Conference_Location
Saratova, Russia
Print_ISBN
5-7433-1065-3
Type
conf
DOI
10.1109/APEDE.2002.1044938
Filename
1044938
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