DocumentCode
2413491
Title
High-efficiency laterally-oxidized InGaAs-AlGaAs single-mode lasers
Author
Heerlein, J. ; Gruber, S. ; Grabherr, M. ; Jager, R. ; Unger, P.
Author_Institution
Dept. of Optoelectron., Ulm Univ., Germany
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
219
Lastpage
220
Abstract
We report on results of laterally wet-oxidized laser diodes operating in single lateral and longitudinal mode. The devices achieve output powers of up to 140 mW at wall-plug efficiencies of 63% in continuous wave operation.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; oxidation; quantum well lasers; 140 mW; 63 percent; InGaAs-AlGaAs; continuous wave operation; high-efficiency laterally-oxidized InGaAs-AlGaAs single-mode lasers; laterally wet-oxidized laser diodes; output powers; single longitudinal mode; wall-plug efficiencies; Diode lasers; Indium gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical devices; Optical refraction; Optical variables control; Pulse measurements; Refractive index; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734214
Filename
734214
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