• DocumentCode
    2413788
  • Title

    Electron trapping: An unexpected mechanism of NBTI and its implications

  • Author

    Campbell, J.P. ; Cheung, K.P. ; Suehle, J.S. ; Oates, A.

  • Author_Institution
    Div. of Semicond. Electron., NIST, Gaithersburg, MD
  • fYear
    2008
  • fDate
    17-19 June 2008
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    In this work, we demonstrate that electron trapping has been overlooked in previous studies and will greatly impact the current understanding of the NBTI phenomenon and consequent lifetime predictions.
  • Keywords
    CMOS integrated circuits; electron traps; integrated circuit reliability; NBTI; electron trapping; lifetime predictions; negative bias temperature instability; Charge carrier processes; Degradation; Electron traps; Interface states; Niobium compounds; Pulse measurements; Stress; Time measurement; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2008 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1802-2
  • Electronic_ISBN
    978-1-4244-1803-9
  • Type

    conf

  • DOI
    10.1109/VLSIT.2008.4588568
  • Filename
    4588568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2413788