• DocumentCode
    2414930
  • Title

    Switching waveforms of the L2 FET: A 5-volt gate-drive power MOSFET

  • Author

    Wheatley, C. Frank, Jr. ; Ronan, Harold R., Jr.

  • Author_Institution
    RCA Solid State Division, Mountaintop, Pa
  • fYear
    1984
  • fDate
    18-21 June 1984
  • Firstpage
    238
  • Lastpage
    246
  • Abstract
    Switching waveforms of a newly announced series of power-MOSFET devices called Logic-Level-FETs (L2 FETs) and featuring a 5-volt gate drive are presented and contrasted to the more conventional 10-volt-gate-drive devices. A new method of characterizing MOSFET switching performance is discussed in which the MOSFET is treated as a vertical JFET driven in cascade from a low-voltage lateral MOS. The 2:1 advantage in rise and fall-time and the 4:1 reduction in switching "dynamic V(sat)" dissipation with constant drive power of the 2 L FET over the 10-volt MOSFET are demonstrated and discussed.
  • Keywords
    Capacitance; Capacitors; JFETs; Logic gates; MOSFET; Standards; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1984 IEEE
  • Conference_Location
    Gaithersburg, MD, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1984.7083485
  • Filename
    7083485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2414930