Study of DC sputtered Cu2O growth and p-Cu2O/ n-IGZO heterojunctions

Author

Ji-Yu Feng ; Chun-Feng Hu ; Xin-Ping Qu

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Cu₂O thin films were deposited on glass substrates by DC magnetron sputtering. The effects of the ratio of Ar/O₂ and sputtering pressure on the structure of the formed copper oxide films were investigated. It is found that with increase of O₂ ratio and sputtering pressure, the formed films change from a mixture of Cu and Cu₂O to pure CuO film. It is also found that the film has a preferred Cu₂O (200) orientation and cluster surface morphology. The fabricated p-Cu₂O/n-IGZO heterojunction has a rectifying I-V characteristic and exhibits a response to UV illumination.

Keywords

copper compounds; gallium compounds; indium compounds; p-n heterojunctions; rectification; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; surface morphology; zinc compounds; Cu₂O-InGaZnO; DC magnetron sputtering; SiO₂; UV illumination; air-oxygen ratio effect; cluster surface morphology; copper oxide film structure; glass substrates; p-n heterojunctions; pure CuO film; rectifying I-V characteristic; sputtering pressure effect; thin films; Abstracts; Magnetic films; Sputtering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021183

Filename

7021183