• DocumentCode
    241531
  • Title

    Investigation of the adhesion properties between COxMOy alloys and porous low-k

  • Author

    Li-Ao Cao ; Hui Feng ; Xu Wang ; Xin-Ping Qu

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, the adhesion properties between different metal films, including Co, Mo, and novel single layer barrier - CoMo alloys with porous low-k dielectrics (k=2.3) have been investigated by using Four-point bending (FPB) tests for the first time. The results show that, Mo has the highest adhesion energy with porous low-k, while Co has the lowest among the test material including reference Ta/TaN. The adhesion ability between CoxMoy films and low-k dielectrics is increased as the Mo concentration increases.
  • Keywords
    adhesion; bending; copper alloys; low-k dielectric thin films; porous materials; CoxMoy; CoMo alloys; CoxMoy films; FPB; adhesion energy; adhesion properties; four-point bending; metal films; porous low-k dielectrics; single layer barrier; Abstracts; Dielectrics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021186
  • Filename
    7021186