III–V-IV integration toward electronics and photonics convergence on a silicon platform

Integration of III-V compound semiconductor devices on a Si manufacturing platform represents one of the most topical challenges today. Potentially, such heterogeneous integration can offer numerous opportunities in combining the unique electronic and photonic functionalities of III-V technology with the large volume, low cost and high density Si CMOS technology. Here we review the major challenges and our recent progress in monolithic integration of III-V materials on Si by direct epitaxy and its device applications. Several importance techniques to achieve high crystalline quality III-V semiconductors on Si are presented and their distinct advantages and limitations are discussed.