Realization of silicon carbide MIS capacitors with high-K and high-K stack dielectric

Silicon carbide MIS capacitors with high dielectric constant material and its stack has been designed and characterized using TCAD Sentaurus tools. Interface dipole theory on metal-dielectric interface has been used to determine the work function of gate metal on different dielectric materials. It has been found that in single dielectric with high-K material Si₃N₄ exhibit better electrical characteristics with fixed oxide charges and interface state density of - 3.06 × 10¹² / cm² and 2.9 × 10¹² /cm² eV respectively. In high-K stack dielectric, extracted fixed oxide charges is found to be lowest in Si₃N₄-SiO2 stack while HfO₂-SiO₂ stack exhibit lowest interface state density of 3.0 × 10¹² /cm² eV. Gate current density of stack dielectric at high electric field is compared with SiO₂ and is found to be lowest in ZrO₂-SiO₂ stack dielectric.