Design of very low voltage CMOS rectifier circuits

Author

Cardoso, Adilson Jair ; Schneider, Márcio Cherem ; Montoro, Carlos Galup

Author_Institution

Fed. Univ. of Santa Catarina, Florianópolis, Brazil

fYear

2010

fDate

13-15 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

This paper presents a simple analytical model of the basic rectifier circuit for very low voltage operation based on the Shockley (exponential) law of the diode. The main alternatives for the implementation of diodes in CMOS technologies and the calculation of the equivalent diode parameters for low voltage operation are summarized. The model of the half-wave rectifier for very low voltage is verified with measurements on a circuit built with a 1N4148 diode. The main diode implementations using MOS transistors of a 0.13 μm technology operating in weak inversion are analyzed and a very simple design procedure is suggested.

Keywords

CMOS integrated circuits; MOSFET; biomedical electronics; integrated circuit design; low-power electronics; rectifiers; semiconductor diodes; 1N4148 diode; MOS transistors; Shockley law; diode implementations; half-wave rectifier; low voltage CMOS rectifier circuits; low voltage operation; simple analytical model; size 0.13 mum; Analytical models; CMOS integrated circuits; Current measurement; Low voltage; MOSFETs; Rectifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems for Medical and Environmental Applications Workshop (CASME), 2010 2nd

Conference_Location

Merida

Print_ISBN

978-1-4244-9994-6

Type

conf

DOI

10.1109/CASME.2010.5706674

Filename

5706674