Gallium nitride based HEMTs for power applications: High field trapping issues

Author

Meneghini, Matteo ; Zanoni, Enrico ; Meneghesso, Gaudenzio

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padua, Italy

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

We review the main physical mechanisms that limit the dynamic performance of GaN-based HEMTs for power applications, exposed to high electric fields. More specifically, we describe: (i) the charge trapping processes responsible for Dynamic-Ron, namely the injection of carriers towards the surface, to the AlGaN/GaN heterostructure, or to the buffer; (ii) the trapping mechanisms related to hot-electrons; (iii) the properties of the point and extended defects responsible for charge trapping in GaN-HEMTs.

Keywords

III-V semiconductors; aluminium compounds; electric fields; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; charge trapping processes; dynamic performance; dynamic-Ron; high electric fields; high field trapping issues; hot-electrons; main physical mechanisms; power applications; Abstracts; Charge carrier processes; Gallium nitride; Iron; Reliability; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021210

Filename

7021210