Basic properties of electrolyte-oxide-semiconductor structures with applications in biochemical sensing

Author

Hao Wang ; Jianguang Gao ; Zhuojie Chen ; Wengang Wu

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

We present the basic properties and potential applications of a kind of electrolyte-oxide-semiconductor (EOS) structure, which is composed of a Si layer, a SiO₂ layer, and an electrolyte solution layer, from bottom to top. It is demonstrated that the EOS structures exhibit a stable one-way electrical conductivity like a diode, and there is a threshold voltage in the ON-switching process. Moreover, it is found that the thicknesses of SiO₂ layers and the concentrations of electrolyte solutions affect the current density obviously. A conductive-filament model is proposed to analyze the conductivity mechanism of EOS structures. The EOS structures can be used for many biochemical applications. We have realized copper-ion detection and pH sensing by utilizing their basic characteristics.

Keywords

biochemistry; biological techniques; copper; electrical conductivity; electrochemical sensors; electrolytes; pH measurement; positive ions; semiconductors; silicon; silicon compounds; Cu²⁺; EOS structure composition; ON-switching process; Si; Si layer; SiO₂; SiO₂ layer thickness effect; biochemical sensing applications; conductive-filament model; conductivity mechanism analysis; copper-ion detection; current density; diode; electrolyte solution concentration effect; electrolyte solution layer; electrolyte-oxide-semiconductor structure properties; one-way electrical conductivity; pH sensing; threshold voltage; Abstracts; Artificial intelligence; Earth Observing System; Films; Switches; Thickness measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021217

Filename

7021217