• DocumentCode
    241615
  • Title

    Geometrical scaling effects in InP/InGaAs double heterojunction bipolar transistor

  • Author

    Min Liu ; YuMing Zhang ; Hongliang Lu ; Yimen Zhang ; Jincan Zhang ; Chenghuan Li ; Wei Zhou ; Lifan Wu

  • Author_Institution
    Key Lab. of Wide Band-Gap Semicond. Mater. & Devices of China, Xidian Univ., Xi´an, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The effect of emitter size of InP/InGaAs hetero-junction bipolar transistors (HBTs) on the DC and AC characteristics is investigated. It is found that the gain of the devices decreases with increase in the perimeter to area ratio of the emitter. The cutoff frequency fT varies with different emitter width, and emitter length. The extracted capacitance and the resistance rC are also presented.
  • Keywords
    III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device manufacture; semiconductor device testing; HBT; InP-InGaAs; double heterojunction bipolar transistor; emitter length; emitter size; emitter width; geometrical scaling effects; Abstracts; Capacitors; Density measurement; Educational institutions; Indium phosphide; Temperature dependence; Vectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021230
  • Filename
    7021230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241615