Effects of crystal imperfections in multiple quantum well PIN optoelectronic devices and a method of restoring failed device characteristics

Author

Ikossi, K. ; Katzer, D.S. ; Binari, S.C. ; Rabinovich, W.S.

Author_Institution

Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA

fYear

2001

fDate

2001

Firstpage

33

Lastpage

35

Abstract

GaAs/AlGaAs and strained InGaAs/AlGaAs multiple quantum well (MQW) optical modulators grown by molecular beam epitaxy (MBE) on GaAs substrates have a wide range of applications in fiber-optic communication systems. One of the challenges in producing reliable devices is the requirement of having large areas of complex MQW structures for optical processing, while maintaining the necessary PIN electrical characteristics. We report the first direct link between crystalline material imperfections and reverse bias behavior in MQW PIN devices. A method of eliminating the crystalline defects and restoring the device characteristics is demonstrated.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well devices; semiconductor device reliability; GaAs; GaAs substrate; GaAs-AlGaAs; InGaAs-AlGaAs; crystalline defect; electrical characteristics; fiber optic communication system; molecular beam epitaxy; multiple quantum well PIN optoelectronic device; optical modulator; optical processing; reliability; reverse bias; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical devices; Optical fiber communication; Optical fiber devices; Optical modulation; Optoelectronic devices; Quantum well devices; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2001. Proceedings

Print_ISBN

0-7908-0066-7

Type

conf

DOI

10.1109/GAASRW.2001.995729

Filename

995729