Improved electrical properties of bottom-gate mizo thin film transistors using oxygen and argon plasma treatment

Author

Chun-Feng Hu ; Ji-Yu Feng ; Yan-Ping Deng ; Xin-Ping Qu

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Both oxygen (O₂) and argon (Ar) plasma treatments are carried out on the bottom-gate structured Mg-doped InZnO (MIZO) thin film transistors (TFTs) prepared by sol-gel method. It is found that the electrical properties of MIZO TFTS are greatly improved with the higher field effect mobility (μ_FE) and two orders of magnitude higher on/off current ratio under both kinds of plasma treatment.

Keywords

argon; indium compounds; magnesium; oxygen; plasma materials processing; sol-gel processing; thin film transistors; zinc compounds; Ar; InZnO; Mg; O₂; argon plasma treatments; bottom-gate structured MIZO thin film transistors; bottom-gate structured Mg-doped InZnO TFT; electrical properties; higher field effect mobility; on-off current; oxygen plasma treatments; sol-gel method; Abstracts; Annealing; Argon; Indium; Integrated optics; Optical films; Plasma properties; MIZO TFTs; plasma treatment; sol-gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021271

Filename

7021271