20-Gbps 60-GHz OOK modulator in SiGe BiCMOS technology

Author

Yodprasit, Uroschanit ; Carta, Corrado ; Ellinger, Frank

Author_Institution

Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany

fYear

2012

fDate

3-5 Oct. 2012

Firstpage

1

Lastpage

5

Abstract

This paper presents design and characterization of a 60-GHz On-Off Keying (OOK) modulator for low-power ultra-high-speed wireless communications. The circuit operation relies on the active control of the load impedance of a differential pair; in addition, a matched always-off differential pair increases the isolation by cancellation of the off currents. The circuit was implemented in a 0.25-μm SiGe BiCMOS and can deliver up to 20 Gbps over a 60-GHz carrier. The OOK modulator exhibits an insertion loss of 1.1 dB and an isolation of 36 dB, requiring 54.6 mW of DC power from a 2-V supply. To the authors´ best knowledge, data rate and isolation are the highest reported for 60-GHz OOK modulators.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; amplitude shift keying; radio networks; BiCMOS technology; OOK modulator; bit rate 20 Gbit/s; frequency 60 GHz; load impedance; low-power ultra-high-speed wireless communications; on-off keying modulator; Bandwidth; CMOS integrated circuits; CMOS technology; Frequency modulation; Transistors; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on

Conference_Location

Potsdam

ISSN

2161-0819

Print_ISBN

978-1-4673-4454-8

Electronic_ISBN

2161-0819

Type

conf

DOI

10.1109/ISSSE.2012.6374286

Filename

6374286