Pulse-train measurement techniques: An RRAM test vehicle for in-depth physical understanding

An overview of the recent progress achieved by pulse-train measurements of HfO_x RRAM is presented. The concept of switching abruptness is first discussed, followed by fine control of multi-level RRAM cells by the pulse-train scheme. Using pulse-train measurements as a test-vehicle, in-depth physical understandings are derived from different regimes of the RESET process.