• DocumentCode
    241814
  • Title

    Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes

  • Author

    Lin Qi ; Nanver, Lis K.

  • Author_Institution
    Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Single-photon avalanche diodes (SPAD) fabricated in PureB (Pure Boron) technology can be made sensitive to the whole vacuum-ultraviolet (VUV) light range from 10 nm - 400 nm if a PureB-only light-entrance window is realized. Different techniques for doing this are evaluated in terms of the device electrical performance in relationship to the effect of the processing on the PureB layer itself. A very low noise SPAD can be achieved when the as-deposited PureB layer is not significantly modified by the subsequent processing.
  • Keywords
    avalanche diodes; boron; p-n junctions; B; PureB-only light-entrance windows; SPAD; VUV sensitive avalanche diodes; pure boron technology; single-photon avalanche diodes; vacuum-ultraviolet light; wavelength 10 nm to 400 nm; Abstracts; Artificial intelligence; Cathodes; Hafnium; Rough surfaces; Surface roughness; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021330
  • Filename
    7021330