DocumentCode
2418951
Title
Experimental analysis and modeling of multi-chip IGBT modules short-circuit behavior
Author
Castellazzi, A. ; Johnson, M. ; Piton, M. ; Mermet-Guyennet, M.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Nottingham, Nottingham, UK
fYear
2009
fDate
17-20 May 2009
Firstpage
285
Lastpage
290
Abstract
Considering the case of railway-traction applications, this paper proposes an extensive experimental characterization of multi-chip IGB-modules, combining fast-transient short-circuit electrical measurements with infrared thermal mapping under realistic operation-like working-conditions. Then, it presents the development of a comprehensive electro-thermal compact model of the multi-chip assembly, which accounts for all major functional and structural electro-thermal effects and which can be used in common circuit simulation environments with great flexibility. A selection of simulation examples demonstrates the usefulness of the model in extending and complementing the information that can be gained by experiment. The results provide precious information for a reliable application of these components.
Keywords
insulated gate bipolar transistors; power bipolar transistors; short-circuit currents; electrothermal compact model; fast-transient short-circuit electrical measurement; infrared thermal mapping; insulated-gate-bipolar-transistor; multichip IGBT module; railway-traction application; short-circuit behavior; Circuit simulation; Circuit testing; DC motors; Insulated gate bipolar transistors; Power system reliability; Pulse width modulation; Rail transportation; Temperature; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2009. IPEMC '09. IEEE 6th International
Conference_Location
Wuhan
Print_ISBN
978-1-4244-3556-2
Electronic_ISBN
978-1-4244-3557-9
Type
conf
DOI
10.1109/IPEMC.2009.5157400
Filename
5157400
Link To Document