• DocumentCode
    241914
  • Title

    Towards full 3D, Zero Variability and Zero power future micro/nano-electronics

  • Author

    Deleonibus, Simon

  • Author_Institution
    LETI, Univ. Grenoble Alpes, Grenoble, France
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In the future, drastic power consumption reduction will request less energy greedy device, interconnect, computing technologies and architectures. Challenging tomorrow´s exponentially growing electronic market, towards Autonomous and Mobile systems for new societal needs, request a drastic reduction towards Zero Intrinsic Variability, Heterogeneous and 3D integration at the device, functional and system levels. Maximizing Energy Efficiency of combined Low Power, High Performance CMOS and Memories to contribute to the energy saving balance at system level, become realistic goals.
  • Keywords
    CMOS memory circuits; energy conservation; low-power electronics; nanoelectronics; power consumption; random-access storage; three-dimensional integrated circuits; 3D integration; autonomous systems; computing technologies; electronic market; energy efficiency; energy greedy device; energy saving; interconnect; low power CMOS; microelectronics; mobile systems; nanoelectronics; power consumption reduction; zero intrinsic variability; Abstracts; Complexity theory; Lead; Logic gates; Mechanical factors; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021383
  • Filename
    7021383