DocumentCode
241914
Title
Towards full 3D, Zero Variability and Zero power future micro/nano-electronics
Author
Deleonibus, Simon
Author_Institution
LETI, Univ. Grenoble Alpes, Grenoble, France
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
In the future, drastic power consumption reduction will request less energy greedy device, interconnect, computing technologies and architectures. Challenging tomorrow´s exponentially growing electronic market, towards Autonomous and Mobile systems for new societal needs, request a drastic reduction towards Zero Intrinsic Variability, Heterogeneous and 3D integration at the device, functional and system levels. Maximizing Energy Efficiency of combined Low Power, High Performance CMOS and Memories to contribute to the energy saving balance at system level, become realistic goals.
Keywords
CMOS memory circuits; energy conservation; low-power electronics; nanoelectronics; power consumption; random-access storage; three-dimensional integrated circuits; 3D integration; autonomous systems; computing technologies; electronic market; energy efficiency; energy greedy device; energy saving; interconnect; low power CMOS; microelectronics; mobile systems; nanoelectronics; power consumption reduction; zero intrinsic variability; Abstracts; Complexity theory; Lead; Logic gates; Mechanical factors; Silicon; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021383
Filename
7021383
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