Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS

Author

Guang-Xi Hu ; Shu-Yan Hu ; Pei-Cheng Li ; Ran Liu ; Ling-Li Wang ; Xing Zhou

Author_Institution

Sch. of Inf. Sci. & Technol., Fudan Univ., Shanghai, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The threshold voltage, V_th, of a surrounding-gate (SG) Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for surface potential is obtained by solving Poisson´s equation. Based on the potential model, an analytical expression for V_th is achieved, with quantum mechanical effects and SB lowering effect included. It is found that V_th will be raised by quantum mechanical effects and lowered by SB lowering effect. It is also found that, the influence of channel length on V_th is complicated; when the channel length is 20 nm, V_th is the smallest.

Keywords

MOSFET; Poisson equation; Schottky barriers; quantum theory; semiconductor device models; surface potential; Poisson equation; Schottky barrier surrounding gate MOSFET; analytic model; metal oxide semiconductor field effect transistor; potential model; quantum mechanical effects; subthreshold channel potential; subthreshold lowering effect; surface potential; surrounding gate Schottky barrier; threshold voltage; Analytical models; Electric potential; Logic gates; MOSFET; Quantum mechanics; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021427

Filename

7021427