• DocumentCode
    242030
  • Title

    An simple approach to evaluate TID response in High Voltage MOSFET for 65nm flash technology

  • Author

    Dandan Jiang ; Zongliang Huo ; Lei Jin ; Xiaonan Yang ; Yan Wang ; Xinkai Li ; Zhihong Yao ; ZhaoAn Yu ; Ming Liu

  • Author_Institution
    Inst. of Microelectron., Beijing, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Two straightforward parameter extraction methods are proposed to characterize the main and parasitic transistor´s Total Ionizing Dose (TID) effect of High Voltage nMOSFET (HV-MOS) for 65nm flash technology. During radiation, the Vth and drain current of the main and parasitic transistor were extracted separately. Clear understanding of the impact of each transistor´s radiation response is helpful to optimize the design of radiation-hard flash memory.
  • Keywords
    MOSFET; flash memories; HV-MOS; TID effect; TID response evaluation; high voltage MOSFET; high voltage nMOSFET; main transistor; parameter extraction methods; parasitic transistor; radiation response; radiation-hard flash memory design; size 65 nm; total ionizing dose effect; Abstracts; MOSFET; MOSFET circuits; Silicon; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021441
  • Filename
    7021441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=242030