Monolithic Ku-band GaAs 1-watt constant phase variable power amplifier

Author

Pritchett, Sam D.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1989

fDate

12-13 June 1989

Firstpage

29

Lastpage

32

Abstract

Three stages of dual-gate FETs (DGFETs) are used to achieve greater than 1-W output power with more than 14 dB associated gain under compressed RF drive while providing more than 30 dB of gain control. Minimal phase variation over the gain control range was also demonstrated. The first, second, and third stages have 800, 3200, and 6400- mu m gate peripheries, respectively. The compressed gain of this amplifier is >14 dB with >1 W output power over the 13.5- to 15.5-GHz band. The input return loss is typically >15 dB across the band.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; power integrated circuits; 1 W; 13.5 to 15.5 GHz; 14 dB; DGFETs; GaAs; Ku-band; SHF; compressed RF drive; compressed gain; constant phase variable power amplifier; dual-gate FETs; gain; gain control; gate peripheries; input return loss; output power; semiconductors; Circuits; FETs; Gain control; Gallium arsenide; MMICs; Microwave amplifiers; Phased arrays; Power amplifiers; Power generation; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37256

Filename

37256