Monolithic V-band pseudomorphic-MODFET low-noise amplifier

Author

Metze, G. ; Cornfeld, A. ; Singer, J. ; Carlson, H. ; Chang, E. ; Kirkendall, T. ; Dahrooge, G. ; Bass, J. ; Hung, H.L. ; Lee, T.

Author_Institution

COMSAT Lab., Clarksburg, MD, USA

fYear

1989

fDate

12-13 June 1989

Firstpage

111

Lastpage

116

Abstract

V-band low-noise MMICs based on pseudomorphic modulation-doped FETs (P-MODFETs) are designed, fabricated, and tested. It is seen that single-stage low-noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35 mu m*60 mu m) exhibit minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs have minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB and maximum gain of 10.4 dB at 59.5 GHz. A cascaded four-stage amplifier (two dual-stage MMIC modules) exhibits a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 of dB of maximum gain. Device processing uniformity data as well as DC and RF reliability data are presented.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; 3.5 to 21.1 dB; 3.9 to 5.8 dB; 58 to 59.5 GHz; EHF; LNA; MIMIC; MMIC; MMICs; V-band; gain; noise figures; processing uniformity; pseudomorphic modulation-doped FETs; pseudomorphic-MODFET low-noise amplifier; reliability data; Equivalent circuits; Etching; Fabrication; Gallium arsenide; Gold; Indium gallium arsenide; Laboratories; Low-noise amplifiers; MIM capacitors; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37275

Filename

37275