GaAs molecular beam epitaxy monolithic power amplifiers at U-band

Author

Hegazi, G. ; Hung, H-L.A. ; Singer, J.L. ; Phelleps, F.R. ; Cornfeld, A.B. ; Smith, T. ; Bass, J.F. ; Carlson, H.E. ; Huang, H.C.

Author_Institution

Comsat Lab., Clarksburg, MD, USA

fYear

1989

fDate

12-13 June 1989

Firstpage

121

Lastpage

125

Abstract

The design, fabrication, and measurements for a 44-GHz band molecular-beam epitaxy (MBE) monolithic power amplifiers are presented. The devices are based on an optimized device structure of large gate-width periphery (0.8 mm). The circuit design approach allows direct cascading of MIMIC (millimeter-wave monolithic integrated circuit) chips to provide useful power gain for system implementation. A five-stage balanced amplifier is highlighted that provided a linear gain of 15.1 dB and maximum output power of 500 mW at 42.5 GHz.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; molecular beam epitaxial growth; 15.1 dB; 42.5 to 44 GHz; 500 mW; EHF; GaAs; MBE; MIMIC; U-band; design; direct cascading; fabrication; five-stage balanced amplifier; gain; large gate-width periphery; measurements; millimeter-wave monolithic integrated circuit; molecular beam epitaxy; monolithic power amplifiers; optimized device structure; output power; power gain; semiconductors; Circuit synthesis; Fabrication; Gallium arsenide; High power amplifiers; Integrated circuit measurements; MIMICs; Molecular beam epitaxial growth; Power amplifiers; Power measurement; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37277

Filename

37277