The role of dianglin bonds in resistance switching behaviors of SiOx - Based RRAM

Author

Kunji Chen ; Yuefei Wang ; Zhonghui Fang ; Wei Li ; Jun Xu ; Xinfan Huang

Author_Institution

State Key Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

We investigated The silicon dianglin bonds (DBs) features and resistance switching behavior of silicon suboxides (SiO_x) sandwiched between Pt electrodes to study the x dependent operation characteristics and the nature of intrinsic conducting filaments in SiO_x based resistance random access memories (ReRAM). When x<;0.80, the forming/set operations need a current compliance and the reset voltage V_reset is lower than set voltage Vset. However, when x>0.95, the operations don´t need a current compliance and V_reset is higher than V_set. X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR) measurements are employed to discover the transition of relative concentration of Si-O tetrahedral configurations and Si DBs with different x value. We propose a Si-DBs percolation model to explain the above characteristics.

Keywords

X-ray photoelectron spectra; forming processes; paramagnetic resonance; platinum; resistive RAM; silicon compounds; ESR measurements; Pt; Pt electrodes; Si-DB percolation model; Si-O tetrahedral configurations; SiO_x; SiOx based RRAM; SiOx based ReRAM; SiOx based resistance random access memories; X-ray photoelectron spectroscopy measurements; XPS measurements; current compliance; dependent operation characteristics; electron spin resonance measurements; forming-set operations; intrinsic conducting filaments; reset voltage; resistance switching behavior; silicon dianglin bonds features; silicon suboxides; Abstracts; Atomic measurements; Chemicals; Current measurement; Laboratories; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021485

Filename

7021485