An indirect extraction of interconnect technology parameters for efficient statistical interconnect modeling and its applications

In this paper, we present the new extraction environment of interconnect technology parameters (ITP). The indirect and automatic extraction methodology, which is applicable to arbitrary test patterns and measurement data, is implemented into this environment. Statistical variations of ITP in 0.25 μm technology are characterized in a fully indirect way. The estimated 3-σ variation of the IMD thickness is more than 20%, which demonstrates the importance of the statistical interconnect modeling in deep sub-micron technology. The extraction environment is also applied to the modeling of the multi-layer conformal dielectric and results are discussed. Interfacing the statistical interconnect modeling to the full-chip RC extraction is briefly discussed