• DocumentCode
    242164
  • Title

    Etching of VOx thin film in HF solution

  • Author

    Rong-Hong Chen ; Yu-Long Jiang

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, the etching of VOx thin film in the diluted HF solution is investigated. It´s revealed that the etching can effectively influence the film resistance but with a constant temperature coefficient of resistance (TCR). It is demonstrated that the metallic components in VOx film will be etched off and the TCR is highly related with the residual VO2 and V2O5 components, which can guide the TCR optimization for VOx based bolometer application.
  • Keywords
    electric resistance; etching; semiconductor materials; semiconductor thin films; vanadium compounds; TCR optimization; VOx; VOx based bolometer application; constant temperature coefficient-of-resistance; diluted HF solution; etching; film resistance; metallic components; residual V2O5 components; residual VO2 components; thin film; Abstracts; Etching; Films; HEMTs; Hafnium; Reliability; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021508
  • Filename
    7021508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=242164