• DocumentCode
    2422165
  • Title

    High Efficiency Quantum Dot Molecule Solar Cells for High Concentration Sunlight Application

  • Author

    Panyakeow, Somsak

  • Author_Institution
    Electrical Engineering Department, Faculty of Engineering, Chulalongkorn University as a lecturer.
  • fYear
    2007
  • fDate
    16-19 Jan. 2007
  • Firstpage
    1145
  • Lastpage
    1148
  • Abstract
    InAs quantum dot molecule (QDM) solar cells are fabricated by modified molecular beam epitaxy technique. With multi-stacks and high dot density greater than 1012 cm-2, a QDM solar cell with hetero-structure provides high conversion efficiency of 25.9 % under 100 mW/cm2 AMI solar simulator. The improved efficiency of this novel nanostructure solar cell is due to the extension of solar response to long wavelength region beyond the band edge of GaAs, which is used as the substrate for the hetero-structure of AlGaAs/GaAs having InAs quantum dot molecules as the active part of the solar cells. It is also found that QDM solar cells perform better at high concentration sunlight due to the low dimensionality of quantum dot structure.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor quantum dots; solar cells; AlGaAs-GaAs; InAs; high concentration sunlight application; modified molecular beam epitaxy; quantum dot molecule; solar cells; Absorption; Energy conversion; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Photovoltaic cells; Photovoltaic systems; Quantum dots; Solar power generation; Sun; High Concentrator Solar Cells; InAs Quantum Dot Molecule Solar Cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
  • Conference_Location
    Bangkok
  • Print_ISBN
    1-4244-0610-2
  • Type

    conf

  • DOI
    10.1109/NEMS.2007.352220
  • Filename
    4160523