Impacts of annealing processes on the electrical properties of gasb metal-oxide-semiconductor devices

Author

Zhenhua Zeng ; Bing Sun ; Hudong Chang ; Wei Zhao ; Xu Yang ; Jiahui Zhou ; Shengkai Wang ; Xiong Zhang ; Yiping Cui ; Honggang Liu

Author_Institution

Microwave Device & IC Dept., Inst. of Microelectron., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, MOS capacitors and Mg-implanted source and drain p-channel GaSb MOSFETs are fabricated. The effects of post-metallization annealing (PMA) on the performance of these devices have been studied. The 30sec 300 °C PMA in N₂ ambient is found to improve the quality of the Al₂O₃/n-GaSb interface. After PMA, for a device with a gate length of 2μm, a maximum drive current of 10.8 mA/mm, and an I_on/I_off ratio of 2×10³ are achieved.

Keywords

III-V semiconductors; MOS capacitors; MOSFET; aluminium compounds; annealing; gallium compounds; semiconductor device metallisation; Al₂O₃-GaSb; MOS capacitors; MOSFET; PMA; annealing processes; electrical properties; metal-oxide-semiconductor devices; post-metallization annealing; size 2 mum; Abstracts; Annealing; Capacitance; Gold; Hysteresis; Logic gates; RNA;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021649

Filename

7021649