• DocumentCode
    2425055
  • Title

    SOI-MOSFET´s body potential: floating or fixed?

  • Author

    Janczyk, Grzegorz

  • Author_Institution
    Inst. of Microelectron. & Optoelectronics, Warsaw Univ. of Technol., Poland
  • fYear
    2003
  • fDate
    18-22 Feb. 2003
  • Firstpage
    63
  • Lastpage
    65
  • Abstract
    Relatively new and more and more advanced technologies like SOI although commonly applied, still remain promising, developing and conceal some ambiguous phenomena.
  • Keywords
    MOSFET; carrier lifetime; minority carriers; semiconductor device models; silicon-on-insulator; SOI simulators; SOI-MOSFET; Si; advanced technologies; channel operating rules; fixed potential; floating potential; minority carriers; performance improvement; strong inversion; universal models; voltage drop; Complexity theory; Dielectrics and electrical insulation; Electronics industry; Electrons; Frequency; MOSFET circuits; Microelectronics; Numerical models; Numerical simulation; Polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CAD Systems in Microelectronics, 2003. CADSM 2003. Proceedings of the 7th International Conference. The Experience of Designing and Application of
  • Print_ISBN
    966-553-278-2
  • Type

    conf

  • DOI
    10.1109/CADSM.2003.1254983
  • Filename
    1254983
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2425055