Parameter optimization of PT-IGBT breakdown voltage

Author

Tzu-Lang Shih ; Chih-Chuan Chang ; Wen-Hsi Lee

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

This paper discusses the benefits of different N-drift doping concentration and terminal guard ring diversification on PT-IGBT(Punch Through) breakdown characteristic. The concept IGBT structure consists of MOS components and bipolar components. The former provided by the high-frequency effect, which provides high voltage. In order to increase the breakdown voltage, the N-drift layer concentration needs to be reduced, caused slower on/off switching loss, thermal issue, and power energy loss. The structure optimization is presented and its functionality is verified by 2D simulations with SILVACO TCAD.

Keywords

insulated gate bipolar transistors; optimisation; semiconductor device breakdown; semiconductor doping; 2D simulations; IGBT structure; MOS components; N-drift doping concentration; N-drift layer concentration; PT-IGBT breakdown voltage; SILVACO TCAD; bipolar components; high-frequency effect; off switching loss; on switching loss; parameter optimization; power energy loss; structure optimization; terminal guard ring diversification; thermal issue; Abstracts; Breakdown voltage; Electric breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021688

Filename

7021688