DocumentCode
2426849
Title
Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment
Author
Liu, Chi Harold ; Hsiu-Shan Lin ; Yu-Yin Lin ; Chen, Jenkon ; Pan, T.M. ; Kao, C.J. ; Huang, K.T. ; Lin, S.H. ; Sheng, Y.C. ; Wen-Tung Chang ; Lee, J.H. ; Huang, M. ; Hsiung, Chiung-Sheng ; Huang-Lu, S. ; Hsu, Chen-Chung ; Liang, Alan Y. ; Jenkon Chen ; H
Author_Institution
Technol. & Process Dev. Div., United Microelectron. Corp, Hsin-Chu, Taiwan
fYear
2002
fDate
2002
Firstpage
268
Lastpage
271
Abstract
Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N2O-grown oxides subsequently followed by NO RTA treatment (N2O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO2- / oxynitride-based gate dielectrics. These films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics of similar thickness (∼1.4 nm) fabricated by different processes.
Keywords
dielectric thin films; leakage currents; nitridation; plasma materials processing; rapid thermal annealing; reliability; silicon compounds; N2O-grown oxide; NO RTA treatment; SiO2; SiO2 film; SiON; interface properties; leakage current; oxynitride film; reliability scaling limit; remote plasma nitridation; ultra-thin gate dielectric; CMOS technology; Dielectric devices; High K dielectric materials; High-K gate dielectrics; Leakage current; Nitrogen; Plasma properties; Rapid thermal annealing; Rapid thermal processing; Scalability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN
0-7803-7352-9
Type
conf
DOI
10.1109/RELPHY.2002.996646
Filename
996646
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