Electromigration study of Al and Cu metallization using WLR isothermal method

Author

Lee, Tom C. ; Ruprecht, Michael ; Tibel, Deborah ; Sullivan, Tim D. ; Wen, Shengming

Author_Institution

IBM Microelectron., Essex Junction, VT, USA

fYear

2002

fDate

2002

Firstpage

327

Lastpage

335

Abstract

Wafer level electromigration behavior of copper and aluminum using isothermal stress was investigated in this paper. Lifetime, lognormal standard deviation, and activation energy were evaluated as a function of stress temperature as well as line width. Temperature dependence of the embedded 2D thermal behavior was modeled via the initial stress current versus the initial resistance correlations. The mass transport mechanisms in the highly accelerated wafer level electromigration were observed to be the same as those in moderately accelerated conventional package level electromigration for both Cu-based and Al-based systems.

Keywords

aluminium; copper; electromigration; failure analysis; focused ion beam technology; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; life testing; Al; Cu; FIB channeling contrast images; Joule heating; ULSI chips; activation energy; electromigration lifetime; embedded 2D thermal behavior; highly accelerated electromigration; initial resistance correlations; initial stress current; interconnect conductors; isothermal stress; lognormal standard deviation; mass transport mechanisms; metallization; parametric tester; stress temperature; temperature coefficient of resistance; wafer level electromigration; Acceleration; Aluminum; Copper; Electromigration; Isothermal processes; Metallization; Semiconductor device modeling; Temperature dependence; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2002. 40th Annual

Print_ISBN

0-7803-7352-9

Type

conf

DOI

10.1109/RELPHY.2002.996656

Filename

996656