DocumentCode
2427637
Title
In situ Raman spectroscopic characterization of compound semiconductor free carrier concentration
Author
Maslar, J.E. ; Wang, C.A. ; Oakley, D.C.
Author_Institution
Chem. Sci. & Technol. Lab., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear
2000
fDate
24-28 July 2000
Abstract
Recently, developments in detectors, filters, and laser technology now make Raman spectroscopy more attractive as an in situ probe. The objective of this work is to develop and evaluate Raman spectroscopy as an in situ, spatially resolved probe of compound semiconductor electrical properties for use in process monitoring and control.
Keywords
Carrier density; III-V semiconductors; Process monitoring; Raman spectra; Raman spectroscopy; Semiconductor epitaxial layers; III-V compound semiconductor; coupled phonon-plasmon mode; epitaxial layers; film heating; free carrier concentration; in situ Raman spectroscopy; process control; process monitoring; spatially resolved probe; Chemical technology; Filters; Holography; Laboratories; Optical films; Phase measurement; Raman scattering; Spectroscopy; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings
Conference_Location
Aventura, FL, USA
ISSN
1099-4742
Print_ISBN
0-7803-6252-7
Type
conf
DOI
10.1109/LEOSST.2000.869719
Filename
869719
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